19.13.6 Auto-Erase Mode - Renesas H8S Series Hardware Manual

19.13.6 Auto-Erase Mode

AC Characteristics
Table 19-25 AC Characteristics in Auto-Erase Mode
= 5.0 V ±10%, V
Conditions: V
CC
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
Status polling start time
Status polling access time
Memory erase time
WE rise time
WE fall time
Erase setup time
Erase end setup time
FWE
Address
CE
OE
WE
I/O
7
I/O
6
Data
Notes on Use of Auto-Erase Mode
• Auto-erase mode supports only entire memory erasing.
• Do not perform a command write during auto-erasing.
• Confirm normal end of auto-erasing by checking I/O
(I/O status polling uses the auto-erase operation end identification pin).
7
= 25°C ±5°C
= 0 V, T
SS a
Symbol
t
nxtc
t
ceh
t
ces
t
dh
t
ds
t
wep
t
ests
t
spa
t
erase
t
r
t
f
t
ens
t
enh
t
ens
t
t
ceh
ces
t
nxtc
t
wep
t t
f
r
t
ds
t
dh
CL
in
H'20
Figure 19-30 Auto-Erase Mode Timing Waveforms
Min Max
20 —
0 —
0 —
50 —
50 —
70 —
1 —
— 150
100 40000
— 30
— 30
100 —
100 —
t
spa
t
ests
t
(100 to 40000 ms)
erase
Erase end identification
signal
Erase normal end
confirmation signal
DL
in
I/O
H'20
. Alternatively, status read mode can also be used for this purpose
6
Unit
µs
ns
ns
ns
ns
ns
ms
ns
ms
ns
ns
ns
ns
t
enh
t
nxtc
to I/O = 0
0 5
Rev.6.00 Oct.28.2004 page 611 of 1016
REJ09B0138-0600H