Auto-Erase Mode - Renesas F-ZTAT H8 Series Hardware Manual

6. ROM
6.8.6

Auto-Erase Mode

AC Characteristics
Table 6.16 AC Characteristics in Auto-Erase Mode
= 5.0 V ±10%, V
(Conditions: V
CC
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
Status polling start time
Status polling access time
Memory erase time
WE rise time
WE fall time
Erase setup time
Erase end setup time
FWE
t
ens
ADDRESS
t
CE
ces
OE
WE
t
f
FO7
FO6
DATA
Rev.3.00 Jul. 19, 2007 page 160 of 532
REJ09B0397-0300
= 0 V, T
SS
Symbol
t
nxtc
t
ceh
t
ces
t
dh
t
ds
t
wep
t
ests
t
spa
t
erase
t
r
t
f
t
ens
t
enh
t
ceh
t
nxtc
t
wep
t
r
t
ds
t
dh
CL
in
H'20
Figure 6.22 Auto-Erase Mode Timing Waveforms
= 25°C ±5°C)
a
Min Max
⎯
20
⎯
0
⎯
0
⎯
50
⎯
50
⎯
70
⎯
1
⎯
150
100 40000
⎯
30
⎯
30
⎯
100
⎯
100
t
spa
t
ests
t (100 to 40000ms)
erase
Erase end identification signal
Erase normal end
confirmation signal
DL
in
FO0 to 5= 0
H'20
Unit Notes
μs
ns
ns
ns
ns
ns
ms
ns
ms
ns
ns
ns
ns
t
enh
t
nxtc