D/A Conversion Characteristics; Flash Memory Characteristics - Renesas H8S Series Hardware Manual

22.7.5

D/A Conversion Characteristics

Table 22-42 lists the D/A conversion characteristics
Table 22-42 D/A Conversion Characteristics
Condition B: V = AV
CC
ø = 2 to 20 MHz, T
T = –40 to +85°C (wide-range specifications)
a
Condition C: V = AV
CC
V = AV
SS
T = –40 to +85°C (wide-range specifications)
a
Item
Resolution
Conversion time
Absolute accuracy
22.7.6

Flash Memory Characteristics

Table 22-43 shows the flash memory characteristics.
Table 22-43 Flash Memory Characteristics (1)
= 5.0 V ± 10%, AV
Conditions: V
CC
T = 0 to +75°C (Programming/erasing operating temperature, regular specifications), T
a
(Programming/erasing operating temperature, wide-range specifications)
Item
Programming time*
Erase time*
Reprogramming count
Programming Wait time after SWE bit
= 5.0 V ± 10%, V
= 4.5 V to AV
CC ref
= –20 to +75°C (regular specifications),
a
= 3.0 V to 5.5 V, V
CC ref
= 0 V, ø = 2 to 13 MHz, T
SS
Condition B
Min Typ
8 8
— —
±1.0
—
— —
= 5.0 V ± 10%, V
CC
1 2 4
* *
1 3 5
* *
1
setting*
Wait time after PSU bit
1
setting*
Wait time after P bit
1 4
setting*
*
Wait time after P bit clear*
Wait time after PSU bit
1
clear*
Wait time after PV bit
1
setting*
Wait time after H'FF dummy
1
write*
, V = AV
CC SS
= 3.0 V to AV ,
CC
= –20 to +75°C (regular specifications),
a
Condition C
Max Min Typ
8 8 8
10 — —
±1.5 ±2.0
—
±1.0
— —
= 4.5 V to AV
ref
Symbol Min Typ
t — 10
P
t — 100
E
N — —
WEC
x 10 —
y 50 —
z 150 —
α
1
10 —
β
10 —
γ
4 —
ε
2 —
= 0 V,
SS
Max Unit Test Conditions
8 bit
µs
10 20-pF capacitive
load
±3.0
LSB 2-MΩ resistive load
±2.0
LSB 4-MΩ resistive load
, V = AV = 0V
CC SS SS
Max Unit
200 ms/32 bytes
1200 ms/block
100 Times
µs
—
µs
—
µs
200
µs
—
µs
—
µs
—
µs
—
Rev.6.00 Oct.28.2004 page 765 of 1016
= 0 to + 85°C
a
Test
Condition
REJ09B0138-0600H