Renesas H8S Series Hardware Manual page 680

Table 19-43 AC Characteristics when Entering Another Mode from Memory Read Mode
= 5.0 V ±10%, V
Conditions: V
CC
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
A to A
18
CE
OE
WE
I/O to I/O
7
Note: Do not enable WE and OE at the same time.
Figure 19-56 Timing Waveforms when Entering Another Mode from Memory Read Mode
Table 19-44 AC Characteristics in Memory Read Mode
= 5.0 V ±10%, V
Conditions: V
CC
Item
Access time
CE output delay time
OE output delay time
Output disable delay time
Data output hold time
Rev.6.00 Oct.28.2004 page 652 of 1016
REJ09B0138-0600H
= 25°C ±5°C
= 0 V, T
SS a
Symbol
t
nxtc
t
ceh
t
ces
t
dh
t
ds
t
wep
t
r
t
f
Memory read mode
Address stable
0
0
= 25°C ±5°C
= 0 V, T
SS a
Symbol
t
acc
t
ce
t
oe
t
df
t
oh
Min Max
20 —
0 —
0 —
50 —
50 —
70 —
— 30
— 30
Other mode command write
t t
nxtc ces
t
f
Min Max
— 20
— 150
— 150
— 100
5 —
Unit
µs
ns
ns
ns
ns
ns
ns
ns
t
ceh
t
wep
t
r
t
t
ds dh
Unit
µs
ns
ns
ns
ns