Renesas H8S Series Hardware Manual page 794

Item
Programming Wait time after PV bit clear*
Erase
Notes: 1. Set the times according to the program/erase algorithms.
2. Programming time per 32 bytes (Shows the total time the flash memory control register 1 (FLMCR1) is set. It
does not include the programming verification time.)
3. Block erase time (Shows the period the E bit in FLMCR1 is set. It does not include the erase verification time.)
4. Maximum programming time
(max)=wait time after P-bit setting (z) × maximum programming count (N))
(t
p
5. Number of times when the wait time after P bit setting (z) = 200 µs.
The maximum number of writes (N) should be set according to the actual set value of z so as not to exceed the
maximum programming time (t
6. For the maximum erase time (t
(z) and the maximum number of erases (N):
(max) = Wait time after E bit setting (z) × maximum number of erases (N)
t
E
The values of z and N should be set so as to satisfy the above formula.
Examples: When z = 5 [ms], N = 240 times
Table 22-43 shows the flash memory characteristics.
Table 22-43 Flash Memory Characteristics (2)
Conditions: V = 3.0 to 3.6 V, AV
CC
T =0 to +75°C (Programming/erasing operating temperature, regular specifications), T
a
(Programming/erasing operating temperature, wide-range specifications)
Item
Programming time*
Erase time*
Reprogramming count
Rev.6.00 Oct.28.2004 page 766 of 1016
REJ09B0138-0600H
Maximum programming
1 4
count* *
Wait time after SWE bit
1
setting*
Wait time after ESU bit
1
setting*
Wait time after E bit
1 6
setting* *
Wait time after E bit clear*
Wait time after ESU bit
1
clear*
Wait time after EV bit
1
setting*
Wait time after H'FF dummy
1
write*
Wait time after EV bit clear*
Maximum erase count*
(max)).
P
(max)), the following relationship applies between the wait time after E bit setting
E
When z = 10 [ms], N = 120 times
= 3.0 to 3.6 V, V
CC
1 2 4
* *
1 3 5
* *
Symbol Min Typ
η
1
4 —
N — —
x 10 —
y 200 —
z 5 —
α
1
10 —
β
10 —
γ
20 —
ε
2 —
η
1
5 —
1 6
* N 120 —
= 3.0 V to AV
ref
Symbol Min Typ
t — 10
P
t — 100
E
N — —
WEC
Max Unit
µs
—
5
1000* Times
µs
—
µs
—
10 ms
µs
—
µs
—
µs
—
µs
—
µs
—
240 Times
, V =AV =0V
CC SS SS
Max Unit
200 ms/32 bytes
1200 ms/block
100 Times
Test
Condition
z = 200 µs
=0 to +85°C
a
Test
Condition