Renesas H8S Series Hardware Manual page 635

Address
CE
OE
WE
Data
Note: Data is latched on the rising edge of WE.
Figure 19-25 Memory Read Mode Timing Waveforms after Command Write
Table 19-22 AC Characteristics when Entering Another Mode from Memory Read Mode
= 5.0 V ±10%, V
Conditions: V
CC
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
Command write
t t
wep ceh
t
ces
t t
f r
H'00
t
dh
t
ds
= 25°C ±5°C
= 0 V, T
SS a
Symbol
t
nxtc
t
ceh
t
ces
t
dh
t
ds
t
wep
t
r
t
f
Memory read mode
Address stable
t
nxtc
Min Max
20 —
0 —
0 —
50 —
50 —
70 —
— 30
— 30
Rev.6.00 Oct.28.2004 page 607 of 1016
Data
Unit
µs
ns
ns
ns
ns
ns
ns
ns
REJ09B0138-0600H