Renesas H8S Series Hardware Manual page 795

16-bit single-chip microcomputer

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Table of Contents

Programming Wait time after SWE bit

Notes: 1. Set the times according to the program/erase algorithms.

2. Programming time per 32 bytes (Shows the total time the flash memory control register (FLMCR) is set. It does

not include the programming verification time.)

3. Block erase time (Shows the period the E bit in FLMCR is set. It does not include the erase verification time.)

4. Maximum programming time

(max)=wait time after P-bit setting (Z) × maximum programming count (N))

5. Number of times when the wait time after P bit setting (z) = 200 µs.

The maximum number of writes (N) should be set according to the actual set value of z so as not to exceed the

maximum programming time (t

6. For the maximum erase time (t

(z) and the maximum number of erases (N):

(max) = Wait time after E bit setting (z) × maximum number of erases (N)

The values of z and N should be set so as to satisfy the above formula.

Examples: When z = 5 [ms], N = 240 times

Wait time after PSU bit

Wait time after P bit

Wait time after P bit clear*

Wait time after PSU bit

Wait time after PV bit

Wait time after H'FF dummy

Wait time after PV bit clear*

Maximum programming

Wait time after SWE bit

Wait time after ESU bit

Wait time after E bit

Wait time after E bit clear*

Wait time after ESU bit

Wait time after EV bit

Wait time after H'FF dummy

Wait time after EV bit clear*

Maximum erase count*

(max)), the following relationship applies between the wait time after E bit setting

When z = 10 [ms], N = 120 times

Rev.6.00 Oct.28.2004 page 767 of 1016

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