Programming And Erasure; Sequencer Modes; E2 Dataflash Access Disabled Mode - Renesas RX100 Series User Manual

RX13T Group
31.7

Programming and Erasure

The ROM and E2 DataFlash can be programmed and erased by changing the mode of the dedicated sequencer for
programming and erasure, and by issuing commands for programming and erasure.
The mode transitions and commands required to program or erase the ROM and E2 DataFlash are described below. The
descriptions apply in common to boot mode and single-chip mode.
31.7.1

Sequencer Modes

The sequencer has four modes. Transitions between modes are caused by writing to the DFLCTL and FENTRYR
registers and setting the FPMCR register. Figure 31.5 is a diagram of mode transitions of the flash memory.
Reset
DFLCTL.DFLEN bit = 0
*2
FRNTRYR register = AA00h
FPMCR register  08h
Note 1. See the corresponding flowchart for details on the procedure.
Note 2. The sequencer can directly enter ROM P/E mode from E2 DataFlash access disabled mode. Set the
DFLCTL.DFLEN bit to 1 before issuing the unique ID read command, the start-up area information program
command, or the access window information program command.
Figure 31.5 Mode Transitions of the Flash Memory
31.7.1.1

E2 DataFlash Access Disabled Mode

In E2 DataFlash access disabled mode, access to the E2 DataFlash is disabled. After a reset, the sequencer enters this
mode.
When setting the DFLCTL.DFLEN bit to 1, the E2 DataFlash is placed in read mode.
R01UH0822EJ0100 Rev.1.00
Jul 31, 2019
E2 DataFlash access disabled Mode
ROM: Read mode
E2 DataFlash: Access disabled
DFLCTL.DFLEN bit = 1
ROM/E2 DataFlash read mode
ROM: Read mode
E2 DataFlash: Read mode
FRNTRYR register = AA01h
*1
FPMCR register  82h/C2h
ROM P/E mode
ROM: P/E mode
E2 DataFlash: Read mode
FRNTRYR register = AA80h
*1
FPMCR register  10h/50h
FRNTRYR register = AA00h
*1
FPMCR register  08h
*1
31. Flash Memory (FLASH)
E2 DataFlash P/E mode
ROM: Read mode
E2 DataFlash: P/E mode
Page 932 of 1041