Usage Notes - Renesas H8S Series Hardware Manual

Section 21 Flash Memory (0.18-µm F-ZTAT Version)
21.9

Usage Notes

1. The initial state of a Renesas product at shipment is the erased state. For a product whose
history of erasing is undefined, automatic erasure for checking the initial state (erased state)
and compensating is recommended.
2. For the PROM programmer suitable for programmer mode in this LSI and its program version,
refer to the instruction manual of the socket adapter.
3. If the socket, socket adapter, or product index of the PROM programmer does not match the
specifications, too much current flows and the product may be damaged.
4. If a voltage higher than the rated voltage is applied, the product may be fatally damaged. Use a
PROM programmer that supports a programming voltage of 3.3 V for Renesas
microcomputers with 1-Mbyte flash memory. Do not set the programmer to HN28F101 or a
programming voltage of 5.0 V. Use only the specified socket adapter. If other adapters are
used, the product may be damaged.
5. Do not remove the chip from the PROM programmer nor input a reset signal during
programming/erasing. As a high voltage is applied to the flash memory during
programming/erasing, doing so may damage flash memory permanently. If a reset is input
accidentally, the reset must be released after a reset period of 100 µs which is longer than
normal.
6. After programming/erasing, access to the flash memory is prohibited until FKEY is cleared. In
case the LSI mode is changed to generate a reset on completion of a programming/erasing
operation, a reset state (RES = 0) of 100 µs or more must be secured. Transitions to the reset
state or hardware standby mode are prohibited during programming/erasing operations.
However, when the reset signal is accidentally input to the chip, the reset must be released
after a reset period of 100 µs that is longer than normal.
7. At turning on or off the VCC power supply, fix the RES pin to low and set the flash memory to
the hardware protection state. This power-on or power-off timing must also be satisfied at a
power-off or power-on caused by a power failure and other factors.
8. Perform programming to a 128-byte programming-unit block only once in on-board
programming or programmer mode.
Perform programming in the state where the programming-unit block is fully erased.
9. When a chip is to be reprogrammed with the programmer after it has already been
programmed or erased in on-board programming mode, automatic programming is
recommended to be performed after automatic erasure.
10. To write data or programs to the flash memory, program data and programs must be allocated
to addresses higher than that of the external interrupt vector table (in normal mode: H'0020, in
advanced mode: H'000040), and H'FF must be written to the areas that are reserved for the
system in the exception handling vector table.
Rev. 3.00 Jul. 14, 2005 Page 824 of 986
REJ09B0098-0300