Figure 21.13 Repeating Procedure Of Erasing And Programming - Renesas H8S Series Hardware Manual

Section 21 Flash Memory (0.18-µm F-ZTAT Version)
(d) The return value in the erasing program, FPFR (general register R0L) is determined.
(e) Determine whether erasure of the necessary blocks has completed.
If more than one block is to be erased, update the FEBS parameter and repeat steps (b) to (e).
Blocks that have already been erased can be erased again.
(f) After erasure completes, clear FKEY and specify software protection.
If this LSI is restarted by a reset immediately after user MAT erasure has completed, secure a reset
period (period of RES = 0) of 100 µs which is longer than normal.
(4) Erasing and Programming Procedure in User Program Mode
By changing the on-chip RAM address of the download destination in FTDAR, the erasing
program and programming program can be downloaded to separate on-chip RAM areas.
Figure 21.13 shows a repeating procedure of erasing and programming.
Download erasing program
Initialize erasing program
destination for programming

Figure 21.13 Repeating Procedure of Erasing and Programming

Rev. 3.00 Jul. 14, 2005 Page 778 of 986
REJ09B0098-0300
Start procedure program
Specify a download
destination for erasing
program by FTDAR
Specify a download
program by FTDAR
Download programming
program
Initialize programming
program
1
1
Erase relevant block
(execute erasing program)
Set FMPDR to
program relevant block
(execute programming
program)
Confirm operation
End ?
Yes
End procedure program
No