Table 21.7 Executable Mat - Renesas H8S Series Hardware Manual

Section 21 Flash Memory (0.18-µm F-ZTAT Version)
6. After programming/erasing, access to the flash memory is prohibited until FKEY is cleared.
In case the LSI mode is changed to generate a reset on completion of a programming/erasing
operation, a reset state (RES = 0) of 100 µs or more must be secured.
Transitions to the reset state or hardware standby mode are prohibited during
programming/erasing operations. However, when the reset signal is accidentally input to the
chip, the reset must be released after a reset period of 100 µs that is longer than normal.
7. Switching of the MATs by FMATS should be required when programming/erasing of the user
MAT is operated in user boot mode. The program that switches the MATs should be executed
from the on-chip RAM. (For details, see section 21.6, Switching between User MAT and User
Boot MAT.) Make sure you know which MAT is currently selected when switching them.
8. When the program data storable area indicated by the programming parameter FMPDR is in
flash memory, an error will occur even when the program data stored is normal. Therefore, the
program data should be temporarily transferred to the on-chip RAM to set an address other
than flash memory in FMPDR.
In consideration of these conditions, the following tables show areas where program data can be
stored and executed for different combinations of operating mode, user MAT bank configuration,
and processing type.

Table 21.7 Executable MAT

Processing
Programming
Erasing
Note: Programming/Erasing is possible to the user MAT.
*
Rev. 3.00 Jul. 14, 2005 Page 784 of 986
REJ09B0098-0300
User Program Mode
Table 21.8 (1)
Table 21.8 (2)
Initiated Mode
User Boot Mode*
Table 21.8 (3)
Table 21.8 (4)