Renesas HD6417641 Hardware Manual page 41

Figure 25.27 Synchronous DRAM Single Write Bus Cycle
(Auto Precharge, TRWL = 1 Cycle) ..................................................................... 939
Figure 25.28 Synchronous DRAM Single Write Bus Cycle (Auto Precharge,
WTRCD = 2 Cycles, TRWL = 1 Cycle) ............................................................... 940
Figure 25.29 Synchronous DRAM Burst Write Bus Cycle (Four Write Cycles)
(Auto Precharge, WTRCD = 0 Cycle, TRWL = 1 Cycle) .................................... 941
Figure 25.30 Synchronous DRAM Burst Write Bus Cycle (Four Write Cycles)
(Auto Precharge, WTRCD = 1 Cycle, TRWL = 1 Cycle) .................................... 942
Figure 25.31 Synchronous DRAM Burst Read Bus Cycle (Four Read Cycles) (Bank Active
Mode: ACT + READ Commands, CAS Latency 2, WTRCD = 0 Cycle) ............ 943
Figure 25.32 Synchronous DRAM Burst Read Bus Cycle (Four Read Cycles)
(Bank Active Mode: READ Command, Same Row Address, CAS Latency 2,
WTRCD = 0 Cycle)
Figure 25.33 Synchronous DRAM Burst Read Bus Cycle (Four Read Cycles)
(Bank Active Mode: PRE + ACT + READ Commands, Different
Row Addresses, CAS Latency 2, WTRCD = 0 Cycle) ........................................ 945
Figure 25.34 Synchronous DRAM Burst Write Bus Cycle (Four Write Cycles)
(Bank Active Mode: ACT + WRITE Commands, WTRCD = 0 Cycle,
TRWL = 0 Cycle) ................................................................................................. 946
Figure 25.35 Synchronous DRAM Burst Write Bus Cycle (Four Write Cycles)
(Bank Active Mode: WRITE Command, Same Row Address,
WTRCD = 0 Cycle, TRWL = 0 Cycle)................................................................. 947
Figure 25.36 Synchronous DRAM Burst Write Bus Cycle (Four Write Cycles)
(Bank Active Mode: PRE + ACT + WRITE Commands,
Different Row Addresses, WTRCD = 0 Cycle, TRWL = 0 Cycle) ..................... 948
Figure 25.37 Synchronous DRAM Auto-Refreshing Timing (WTRP = 1 Cycle,
WTRC = 3 Cycles)................................................................................................ 949
Figure 25.38 Synchronous DRAM Self-Refreshing Timing (WTRP = 1 Cycle) ...................... 950
Figure 25.39 Synchronous DRAM Mode Register Write Timing (WTRP = 1 Cycle)............... 951
Figure 25.40 Synchronous DRAM Access Timing in Low-Frequency Mode
(Auto-Precharge, TRWL = 2 Cycles) ................................................................... 952
Figure 25.41 Synchronous DRAM Self-Refreshing Timing in Low-Frequency Mode
(WTRP = 2 Cycles)............................................................................................... 953
Figure 25.42 SCK Input Clock Timing....................................................................................... 954
Figure 25.43 SCIF Input/Output Timing in Synchronous Mode ................................................ 955
Figure 25.44 I/O Port Timing ..................................................................................................... 955
Figure 25.45 DREQ Input Timing.............................................................................................. 955
Figure 25.46 DACK, TEND Output Timing .............................................................................. 955
Figure 25.47 MTU Input/Output Timing.................................................................................... 956
................................................................................................ 944
Rev. 4.00 Sep. 14, 2005 Page xli of l