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Inverter Description The HD74HCT1G04 is high-speed CMOS inverter using silicon gate CMOS process. With CMOS low power dissipation, it provides high-speed equivalent to LS–TTL series. The internal circuit of three stages construction with buffer provides wide noise margin and stable output.
HD74HCT1G04 Outline and Article Indication • HD74HCT1G04 CMPAK–5 Function Table Input A H : High level L : Low level Pin Arrangement IN Y Rev.5.00, Jan.28.2004, page 2 of 7 Index band Output Y OUT Y (Top view) Marking = Control code...
HD74HCT1G04 Absolute Maximum Ratings Item Symbol Supply voltage range Input voltage range *1, 2 Output voltage range Input clamp current Output clamp current Continuous output current Continuous current through or I or GND Maximum power dissipation at Ta = 25°C (in still air)
HD74HCT1G04 Electrical Characteristics Item Symbol Input voltage 4.5 to 4.5 to — Output voltage 4.18 — — Input current — Operating — current Quiescent — supply current Rev.5.00, Jan.28.2004, page 4 of 7 = 25°C = –40 to 85°C Unit Test Conditions —...
HD74HCT1G04 Switching Characteristics Ta = 25°C Item Symbol Min Output rise / fall time — Propagation delay time — — = 15 pF, t = 6 ns, V = 5 V) Item Symbol Output rise / fall time Propagation delay time Input capacitance —...
HD74HCT1G04 Test Circuit Pulse generator Note: 1. C includes probe and jig capacitance. Waveforms t = 6 ns 1.3 V Input Output Rev.5.00, Jan.28.2004, page 6 of 7 Input Output t = 6 ns 1.3 V 1.3 V 1.3 V...
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Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.