Flash Memory Characteristics; Table 21.8 Flash Memory Characteristics - Renesas H8SX/1520 Series Hardware Manual

21.5

Flash Memory Characteristics

Table 21.8 Flash Memory Characteristics

Conditions: V
Item
Programming time*
1
Erase time*
*
Programming time (total)
1 2 4
* * *
Erase time (total) *
Programming/erase time
1 2 4
(total) *
* *
Number of programming
Data retention time*
Notes: 1. Programming time and erase time depend on data in the flash memory.
2. Programming time and erase time do not include time for data transfer.
3. All the characteristics after programming are guaranteed within this value (guaranteed
value is from 1 to Min. value).
4. Characteristics when programming is performed within the Min. value
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= 4.5 V to 5.5 V, AV
CC
V = AV = 0 V, Iφ = 8 to 40 MHz, Pφ = 8 to 35 MHz,
SS SS
T = 0°C to +85°C (wide-range specifications)
a
Symbol
1 2 4
* * t
P
2 4
t
*
E
Σt
P
Σt
1 2 4
* *
E
Σt
PE
N
WEC
4
t
DRP
= 4.5 V to 5.5 V, AV
CC0
Min. Typ. Max.

3 30

80 800

500 5000

1000 10000

5 15

5 15

10 30
 
3
100*
 
10
Section 21 Electrical Characteristics
= 4.5 V to 5.5 V,
CC1
Unit
ms/128 bytes
ms/4-kbyte
block
ms/32-kbyte
block
ms/64-kbyte
block
s/256 kbytes
s/256 kbytes
s/256 kbytes
Times
Year
Rev. 3.00 Mar. 14, 2006 Page 777 of 804
REJ09B0104-0300
Test
Condition
T = 25°C,
a
memory filled
with 0.
T = 25°C
a
T = 25°C
a