Samsung S3C2451X User Manual page 752

Risc microprocessor
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ELECTRICAL DATA
(VDD12V = 1.2V ± 5%, TA = -40 to 85°C, VDDA33x = 3.3V ± 0.3V)
Parameter
Supply Current
Suspend Device
Leakage Current
Hi-Z state Input Leakage
Input Levels
Differential Input Sensitivity
Differential Common Mode
Range
Single Ended Receiver
Threshold
Output Levels
Static Output Low
Static Output High
Capacitance
Transceiver Capacitance
Preliminary product information describe products that are in development,
for which full characterization data and associated errata are not yet available.
29-28
Specifications and information herein are subject to change without notice.
Table 29-24. USB Electrical Specifications
Symbol
Condition
ICCS
ILO
0V < VIN < 3.3V
VDI
| (D+) – (D-) |
VCM
Includes VDI range
VSE
VOL
RL of 1.5Kohm to 3.6V
VOH
RL of 15Kohm to GND
CIN
Pin to GND
S3C2451X RISC MICROPROCESSOR
Min
Max
-10
10
0.2
0.8
2.5
0.8
2.0
0.3
2.8
3.6
20
Unit
µA
µA
V
V
pF

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