Samsung S3C2451X User Manual page 114

STATIC MEMORY CONTROLLER
FEATURE
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Supports asynchronous static memory-mapped devices including RAM, ROM, OneNAND and flash
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Supports synchronous static memory-mapped devices including synchronous burst flash
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Supports asynchronous page mode read operation in non-clocked memory subsystems
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Supports asynchronous burst mode read access to burst mode ROM and flash devices
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Supports synchronous burst mode read, write access to burst mode ROM and flash devices
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Supports 8 and 16-bit data bus
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Address space : Up to 64MB per Bank
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Fixed memory bank start address
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External wait to extend the bus cycle
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Support byte, half-word and word access for external memory
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Programmable wait states, up to 31
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Programmable bus turnaround cycles, up to 15
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Programmable output enable and write enable delays, up to 15
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Configurable size at reset for boot memory bank using external control pins
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Support for interfacing to another memory controller using an External Bus Interface (EBI)
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Multiple memory clock frequencies available, HCLK and HCLK/2
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Eight word, 32-bit, wrapping reads from 16-bit memory
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SMBSTWAIT is synchronous burst wait input that the external device uses to delay a synchronous burst
transfer for bank 0. When this signal is not used, it shall be driven to high.
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nWAIT is wait mode input from external memory controller. Active HIGH or active LOW, as programmed in
the SMC Control Registers for each bank.
Preliminary product information describe products that are in development,
for which full characterization data and associated errata are not yet available.
5-2
Specifications and information herein are subject to change without notice.
S3C2451X RISC MICROPROCESSOR