Samsung S3C2451X User Manual page 729

S3C2451X RISC MICROPROCESSOR
Table 29-4. Special Memory DDR I/O PAD DC Electrical Characteristics
Symbol
VDD_
Output supply voltage
sdram
VDDi Internal Core Voltage
Temp Ambient Temperature
Vih
Vil
Iih High Level Input Current
Iil Low Level Input Current
High Level Input Current (with Pull
Iih
Iil Low Level Input Current (with Pull Up)
Voh Output High Voltage(@Ioh=-100uA)
Vol Output Low Voltage(@Iol=100uA)
Symbol
VIH High level input voltage
VIL Low level input voltage
IIH High level input current
IIL Low level input current
VOH Static Output High
VOL Static Output Low
Symbol
VDD_RTC Output supply voltage
V DC input logic high
IH
V DC input logic low
IL
IIH High level input current
IIL Low level input current
Parameter
400MHz
533MHz
dc Input Logic High
dc Input Logic Low
Down)
Table 29-5. USB DC Electrical Characteristics
Parameter
Table 29-6. RTC OSC DC Electrical Characteristics
Parameter
Preliminary product information describe products that are in development,
for which full characterization data and associated errata are not yet available.
Specifications and information herein are subject to change without notice.
Min
1.70
-40
0.8*VDD
sdram
-
-10
-10
20
-60
VDDsdram
-0.2
-
Condition
Vin = 3.3V
Vin = 0.0V
15K to GND
1.5K to 3.6V
Min
2.5
0.8*VDDrtc
-10
-10
Typ Max
1.8 1.90
1.3(TBD)
TBD
25 85
- -
0.2*VDD
-
sdram
- 10
- 10
- 60
- -20
- -
- 0.2
Min
2.5
-10
-10
2.8
Typ Max
3.0 3.6
0.2*VDDrtc
10
10
ELECTRICAL DATA
Unit Note
V
V
°C
V
V
uA
uA
uA
uA
V
V
Max Unit
V
0.8 V
μA
10
μA
10
3.6 V
0.3 V
Unit
V
V
V
μA
μA
29-5