Glossary - NXP Semiconductors MKL27Z128VFM4 Reference Manual

Table of Contents

Advertisement

Interrupt
Register access
To MCU's
flash controller

45.1.3 Glossary

Command write sequence — A series of MCU writes to the flash FCCOB register
group that initiates and controls the execution of flash algorithms that are built into the
flash memory module.
Endurance — The number of times that a flash memory location can be erased and
reprogrammed.
FCCOB (Flash Common Command Object) — A group of flash registers that are used
to pass command, address, data, and any associated parameters to the memory controller
in the flash memory module.
Flash block — A macro within the flash memory module which provides the nonvolatile
memory storage.
Flash Memory Module — All flash blocks plus a flash management unit providing
high-level control and an interface to MCU buses.
IFR — Nonvolatile information register found in each flash block, separate from the
main memory array.
Longword — 32 bits of data with an aligned longword having byte-address[1:0] = 00.
Freescale Semiconductor, Inc.
Status
registers
Memory controller
Control
registers
Figure 45-1. Flash Block Diagram
KL27 Sub-Family Reference Manual , Rev. 5, 01/2016
Chapter 45 Flash Memory Module (FTFA)
Program flash
0
Program flash
1
889

Advertisement

Table of Contents
loading

Table of Contents