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Section 25 Flash Memory - Renesas H8S Family Hardware Manual

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The flash memory has the following features. Figure 25.1 shows a block diagram of the flash
memory.
25.1
Features
Size
512 Kbytes (ROM address: H'000000 to H'07FFFF)
Programming/erasing interface by the download of on-chip program
This LSI has a dedicated programming/erasing program. After downloading this program to
the on-chip RAM, programming/erasing can be performed by setting the argument parameter.
Programming/erasing time
The flash memory programming time is 1 ms (typ) in 128-byte simultaneous programming and
approximately 7.8 µs per byte. The erasing time is 600 ms (typ) per 64-Kbyte block.
Number of programming
The number of flash memory programming can be up to 100 times at the minimum. (The value
ranged from 1 to 100 is guaranteed.)
Four on-board programming modes
 SCI boot mode
This mode uses an on-chip SCI_1 interface to program and erase the user MAT. This mode
can automatically adjust the bit rate between the host and this LSI.
 USB boot mode (only in the H8S/2472 Group)
This mode uses an on-chip USB to program and erase the user MAT.
 User program mode
The user MAT can be programmed by using the optional interface.
 User boot mode
The user boot program of the optional interface can be made and the user MAT can be
programmed.
Programming/erasing protection
Sets protection against flash memory programming/erasing via hardware, software, or error
protection.
Programmer mode
This mode uses the PROM programmer. The user MAT and user boot MAT can be
programmed.

Section 25 Flash Memory

Section 25 Flash Memory
Rev. 1.00 Mar. 12, 2008 Page 917 of 1178
REJ09B0403-0100

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This manual is also suitable for:

R4f2472R4f2462H8s/2462H8s/2400 seriesH8s/2472