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Flash Memory Characteristics - Renesas H8S Family Hardware Manual

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31.5

Flash Memory Characteristics

Table 31.18 lists the flash memory characteristics.
Table 31.18 Flash Memory Characteristics
Conditions: VCC = 3.0 V to 3.6 V, AVCC = 3.0 V to 3.6 V, Avref = 3.0 V to AVCC, VSS =
AVSS = 0 V
Ta = 0°C to +75°C (operating temperature range for programming/erasing in regular
specifications)
Item
1
Programming time*
*
1
2
4
Erase time*
*
*
Programming time
1
2
4
(total)*
*
*
1
2
Erase time (total)*
*
Programming and
1
2
Erase time (total)*
*
Reprogramming
5
count*
4
Data retention time*
Notes: 1. Programming and erase time depends on the data.
2. Programming and erase time do not include data transfer time.
3. This value indicates the minimum number of which the flash memory are
reprogrammed with all characteristics guaranteed. (The guaranteed value ranges from
1 to the minimum number.)
4. This value indicates the characteristics while the flash memory is reprogrammed within
the specified range (including the minimum number).
5. Reprogramming count in each erase block.
Symbol
Min.
2
4
t
*
P
t
E
Σ t
P
Σ t
4
*
E
Σ t
PE
4
*
3
N
100*
WEC
t
10
DRP
Typ.
Max.
Unit
1
10
ms/128 bytes
40
130
ms/4-kbyte block
300
800
ms/32-kbyte block
600
1500
ms/64-kbyte block
9.2
24
s/512 kbytes
9.2
24
18.4
48
1000
Times
Years
Rev. 1.00 Mar. 12, 2008 Page 1163 of 1178
Section 31 Electrical Characteristics
Test
Conditions
Ta = 25°C
REJ09B0403-0100

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