Renesas H8S Series Hardware Manual page 558

Section 21 Electrical Characteristics
Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or
erase/erase-verify flowchart.
2. Programming time per 128 bytes (Shows the total period for which the P-bit in the flash
memory control register (FLMCR1) is set. It does not include the programming
verification time.)
3. Block erase time (Shows the total period for which the E-bit FLMCR1 is set. It does not
include the erase verification time.)
4. To specify the maximum programming time value (tp (max.)) in the 128-bytes
programming algorithm, set the max. value (1000) for the maximum programming count
(N).
The wait time after P bit setting should be changed as follows according to the value of
the programming counter (n).
Programming counter (n) = 1 to 6:
Programming counter (n) = 7 to 1000:
[In additional programming]
Programming counter (n) = 1 to 6:
5. For the maximum erase time (t
wait time after E bit setting (t
t (max.) = Wait time after E bit setting (t
E
To set the maximum erase time, the values of (t
the above formula.
Examples: When t
Rev. 6.00 Mar 15, 2006 page 522 of 570
REJ09B0211-0600
(max.)), the following relationship applies between the
E
) and the maximum erase count (N):
se
= 100 ms, N = 12 times
se
When t = 10 ms, N = 120 times
se
= 30 µs
t
sp30
= 200 µs
t
sp200
= 10 µs
t
sp10
) x maximum erase count (N)
se
) and (N) should be set so as to satisfy
se