Section 18 Rom; Features - Renesas H8S Series Hardware Manual

The features of the flash memory are summarized below.
The block diagram of the flash memory is shown in figure 18.1.
18.1

Features

• Size: 128 kbytes
• Programming/erase methods
 The flash memory is programmed 128 bytes at a time. Erase is performed in single-block
units. The flash memory is configured as follows: 32 kbytes × 2 blocks, 28 kbytes × 1
block, 16 kbytes × 1 block, 8 kbytes × 2 blocks, and 1 kbyte × 4 blocks. To erase the entire
flash memory, each block must be erased in turn.
• Reprogramming capability
 The flash memory can be reprogrammed up to 100 times.
• Three programming modes
 Boot mode
 User mode
 Programmer mode
On-board programming/erasing can be done in boot mode, in which the boot program built
into the chip is started to erase or program of the entire flash memory. In normal user program
mode, individual blocks can be erased or programmed.
• Programmer mode
 Flash memory can be programmed/erased in programmer mode using a PROM
programmer, as well as in on-board programming mode.
• Automatic bit rate adjustment
 For data transfer in boot mode, this LSI's bit rate can be automatically adjusted to match
the transfer bit rate of the host.
• Programming/erasing protection
 Sets software protection against flash memory programming/erasing.

Section 18 ROM

Rev. 6.00 Mar 15, 2006 page 455 of 570
Section 18 ROM
REJ09B0211-0600