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17.13
Overview of Flash Memory (H8S/2319 F-ZTAT)
17.13.1 Features
The H8S/2319 F-ZTAT has 512 kbytes of on-chip flash memory. The features of the flash
memory are summarized below.
• Four flash memory operating modes
Program mode
Erase mode
Program-verify mode
Erase-verify mode
• Programming/erase methods
The flash memory is programmed 128 bytes at a time. Erasing is performed by block erase (in
single-block units). To erase the entire flash memory, the individual blocks must be erased
sequentially. Block erasing can be performed as required on 4-kbyte, 32-kbyte, and 64-kbyte
blocks.
• Programming/erase times
The flash memory programming time is 10.0 ms (typ.) for simultaneous 128-byte
programming, equivalent to 78 µs (typ.) per byte, and the erase time is 50 ms (typ.).
• Reprogramming capability
The flash memory can be reprogrammed up to 100 times.
• On-board programming modes
There are two modes in which flash memory can be programmed/erased/verified on-board:
Boot mode
User program mode
• Automatic bit rate adjustment
With data transfer in boot mode, the bit rate of the chip can be automatically adjusted to match
the transfer bit rate of the host.
• Flash memory emulation by RAM
Part of the RAM area can be overlapped onto flash memory, to emulate flash memory updates
in real time.
• Protect modes
There are three protect modes, hardware, software, and error protect, which allow protected
status to be designated for flash memory program/erase/verify operations.
• Programmer mode
Flash memory can be programmed/erased in programmer mode, using a PROM programmer,
as well as in on-board programming mode.
Rev. 5.00, 12/03, page 612 of 1088
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