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20.4.6
Flash Memory Characteristics
Table 20-38 Flash Memory Characteristics
Condition B: V
= 3.0 V to 3.6 V, AV
CC
0 V, T
a
specifications), T
wide-range specifications)
Item
Programming time *
1
*
2
Erase time *
1
*
3
*
6
Programming time (total) *
Erase time (total) *
1
*
2
Programming and erase time
1
2
(total) *
*
Number of overwrites
Data retention time
Notes: 1. The exact programming and erase times depend on the characteristics of the data.
2. Programming and erase times do not include data transfer time.
3. This is the minimum number of rewrites after which all characteristics are guaranteed.
(The guaranteed range is 1 to minimum.)
4. This is the data retention characteristic when the number of rewrites is within the
specification range, including minimum values.
20.4.7
Usage Note (Internal voltage step down for the H8S/2319C F-ZTAT)
The H8S/2319C F-ZTAT has an on-chip voltage step down circuit that automatically lowers the
power supply voltage, inside the microcomputer, to an adequate level. A capacitor (0.1 µF) should
be connected between the internal voltage step down circuit pin (V
stabilize the internal voltage. Figure 20.24 shows how to connect the capacitor. Do not connect the
V
power supply to the V
CC
power-supply to the V
Rev. 5.00, 12/03, page 844 of 1088
= 3.0 V to 3.6 V, V
CC
= 0°C to +75°C (program/erase operating temperature range: regular
= 0°C to +85°C (program/erase operating temperature range:
a
Symbol
Min
t
—
P
t
—
E
—
—
∑t
1
*
2
—
P
∑t
—
E
∑t
—
PE
100 *
NWEC
10 *
t
DRP
pin. Doing so could permanently damage the LSI. (Connect the V
CL
pin, in the usual way.)
CC
ref
Typ
Max
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
3
4
— Preliminary —
= 3.0 V to AV
, V
CC
SS
Unit
Test Conditions
ms/128 bytes
ms/4 k block
ms/32 k block
ms/64 k block
s/512 kbytes
T
= 25°C when all
a
cleared to 0
s/512 kbytes
T
= 25°C
a
s/512 kbytes
Times
Years
pin) and the V
CL
SS
= AV
=
SS
pin to
CC
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