17.29.2 Ac Characteristics And Timing In Prom Mode - Renesas H8S/2319 series Hardware Manual

17.29.2 AC Characteristics and Timing in PROM Mode

Table 17-65 AC Characteristics in Memory Read Mode
Condition: V = 3.3 V ± 0.3 V, V
CC
Code
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Programming pulse width
WE rise time
WE fall time
A18-0
CE
OE
WE
I/O7-0
Note : Data is latched at the rising edge of WE.
Figure 17-88 Memory Read Timing after Command Write
= 0 V, T = 25˚C ± 5˚C
SS a
Symbol
t
nxtc
t
ceh
t
ces
t
dh
t
ds
t
wep
t
r
t
f
Command write
t
t
ces
ceh
t
wep
tf tr
t t
ds dh
Min
20
0
0
50
50
70
—
—
Memory read mode
Address stable
t
nxtc
Rev. 5.00, 12/03, page 757 of 1088
Max Unit
µs
—
— ns
— ns
— ns
— ns
— ns
30 ns
30 ns