Renesas H8S/2319 series Hardware Manual page 684

A to A
18
0
CE
OE
WE
Data
Note: Data is latched at the rising edge of WE.
Figure 17-52 Memory Read Mode Timing Waveforms after Command Write
Table 17-38 AC Characteristics when Entering Another Mode from Memory Read Mode
(Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
Rev. 5.00, 12/03, page 654 of 1088
Command write
t t
wep ceh
t
ces
t t
f r
H'00
t
dh
t
ds
= 3.3 V ±0.3 V, V
CC
Symbol
t
nxtc
t
ceh
t
ces
t
dh
t
ds
t
wep
t
r
t
f
Memory read mode
Address stable
t
nxtc
= 0 V, T = 25°C ±5°C)
SS a
Min Max
20 —
0 —
0 —
50 —
50 —
70 —
— 30
— 30
Data
Unit
µs
ns
ns
ns
ns
ns
ns
ns