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6.5
Flash Memory Overview
6.5.1
Features
The features of the 60 Kbytes or 32 Kbytes of flash memory built into the F-ZTAT versions are
summarized below.
• Programming/erase methods
The flash memory is programmed 128 bytes at a time. Erase is performed in single-block
units. The 60-Kbyte flash memory is configured as follows: 1 Kbyte × 4 blocks, 28 Kbytes
× 1 block, 16 Kbytes × 1 block, 8 Kbytes × 1 block and 4 Kbytes × 1 block. The 32-Kbyte
flash memory is configured as follows: 1 Kbyte × 4 blocks, 28 Kbytes × 1 block. To erase
the entire flash memory, each block must be erased in turn.
• Reprogramming capability
The flash memory can be reprogrammed up to 1,000 times.
• On-board programming
On-board programming/erasing can be done in boot mode, in which the boot program built
into the chip is started to erase or program of the entire flash memory. In normal user
program mode, individual blocks can be erased or programmed.
• Programmer mode
Flash memory can be programmed/erased in programmer mode using a PROM
programmer, as well as in on-board programming mode.
• Automatic bit rate adjustment
For data transfer in boot mode, this LSI's bit rate can be automatically adjusted to match
the transfer bit rate of the host.
• Programming/erasing protection
Sets software protection against flash memory programming/erasing.
• Power-down mode
The power supply circuit is partly halted in the subactive mode and can be read in the
power-down mode.
Rev. 6.00 Aug 04, 2006 page 167 of 680
Section 6 ROM
REJ09B0145-0600
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