Burst Operation - Hitachi H8S/2378, H8S/2378R Series Hardware Manual

16 bit single-chip microcomputer
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(Address shift size set to 8 bits)
DCTL
Figure 6.51 Example of DQMU and DQML Byte Control
6.7.12

Burst Operation

With synchronous DRAM, in addition to full access (normal access) in which data is accessed by
outputting a row address for each access, burst access is also provided which can be used when
making consecutive accesses to the same row address. This access enables fast access of data by
simply changing the column address after the row address has been output. Burst access can be
selected by setting the BE bit to 1 in DRAMCR.
This LSI
(
)
(
)
(
)
(DQMU)
(DQML)
(SDRAMø)
A23
A21
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
D15 to D0
(CKE)
I/O PORT
Notes: 1. Bank control is not available.
2. The CKE and
3. The
pin must be fixed to 0 before accessing synchronous DRAM.
16-Mbit synchronous DRAM
1 Mword × 16 bits × 4-bank configuration
8-bit column address
DQMU
DQML
CLK
A13 (BS1)
A12 (BS0)
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
DQ15 to DQ0
CKE
pins must be fixed to 1 when the power supply is input.
Rev. 1.0, 09/01, page 195 of 904
Row address
input: A11 to A0
Column address
input: A7 to A0
Bank select
address: A13/A12

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