Xilinx Zynq-7000 User Manual page 154

Memory interface solutions
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Implementation Details
A write command is issued with a known write data pattern (FF 00 AA 55 55 AA 99 66)
to a specific location. This is followed by a read command to the same location. The data
read back out of the IN_FIFO is compared with the expected data pattern on a byte basis. If
the data read out matches the expected pattern, no further changes are required in the
write path for that byte, as shown in
the second set of data words in the expected pattern, the DQS and DQ 3-state signal must
be delayed by one memory clock. This scenario is shown in
are calibrated, the calibration logic asserts the init_calib_complete signal indicating
the completion of the initialization and calibration sequence. The Memory Controller can
now drive the address, command, and data buses.
X-Ref Target - Figure 1-69
Figure 1-69: DQS Aligned to the Correct CK Edge – No Change in Write Path
X-Ref Target - Figure 1-70
Figure 1-70: DQS Aligned to Incorrect CK Edge – Delay DQS/DQ by One Memory Clock Cycle
Read Leveling
Read leveling stage 1 is required to center align the read strobe in the read valid data
window for the first stage of capture. In strobe-based memory interfaces like DDR2 or
DDR3 SDRAM, the second stage transfer requires an additional pulse which in
7 series FPGAs is provided by the PHASER_IN block. This stage of calibration uses the
PHASER_IN stage 2 fine delay line to center the capture clock in the valid DQ window. The
capture clock is the free-running FREQ_REF clock that is phase aligned to read DQS in the
PHASER_IN phase locked stage.
Zynq-7000 AP SoC and 7 Series FPGAs MIS v4.1
UG586 November 30, 2016
Chapter 1: DDR3 and DDR2 SDRAM Memory Interface Solution
Figure
1-69. If the first two data words read back match
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Figure
1-70. After all the bytes
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