Overview Of The External Bus Interface - Fujitsu FR60 Hardware Manual

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CHAPTER 4 EXTERNAL BUS INTERFACE
4.1

Overview of the External Bus Interface

This section describes the features of the external bus interface.
■ Features of the External Bus Interface
Addresses of up to 32 bits can be output.
Various kinds of external memory (8-bit/16-bit modules) can be directly connected and multiple access
timings can be mixed and controlled.
Asynchronous SRAM and asynchronous ROM/FLASH memory (multiple write strobe method or
byte enable method)
Page mode ROM/FLASH memory (Page sizes 2, 4, and 8 can be used)
Address/data multiplex bus (8-bit/16-bit width only)
Synchronous memory (such as ASIC built-in memory)
Note: Synchronous SRAM cannot be directly connected.
Four independent banks (chip select areas) can be set, and chip select corresponding to each bank can
be output.
The size of each area can be set in multiples of 64K bytes (64K bytes to 2 GB for each chip select
area).
An area can be set at any location in the logical address space (Boundaries may be limited
depending on the size of the area.)
In each chip select area, the following functions can be set independently:
Enabling and disabling of the chip select area (Disabled areas cannot be accessed)
Setting of the access timing type to support various kinds of memory
Detailed access timing setting (individual setting of the access type such as the wait cycle)
Setting of the data bus width (8-bit/16-bit)
Setting for the order of bytes (big or little endian)
Note: Only big endian can be set for the CS0 area.
Setting of write disable (read-only area)
Enabling and disabling of fetches from the built-in cache
Enabling and disabling of the prefetch function
Maximum burst length setting (1, 2, 4, 8)
A different detailed timing can be set for each access timing type.
For the same type of access timing, a different setting can be made in each chip select area.
Auto-wait can be set to up to 15 cycles (asynchronous SRAM, ROM, Flash, and I/O area).
The bus cycle can be extended by external RDY input (asynchronous SRAM, ROM, Flash, and I/O
area).
The first access wait and page wait can be set (burst, page mode, and ROM/FLASH area).
Various kinds of idle/recovery cycles and setting delays can be inserted.
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