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M16C/64A Group
Table 31.40
Electrical Characteristics (3)
R5F364AKNFA, R5F364AKNFB, R5F364AKDFA, R5F364AKDFB
R5F364AMNFA, R5F364AMNFB, R5F364AMDFA, R5F364AMDFB
V
= V
= 2.7 to 3.3 V, V
CC1
CC2
Symbol
Parameter
I
Power supply current
CC
In single-chip, mode,
the output pin are
open and other pins
are V
SS
Note:
1.
This indicates the memory in which the program to be executed exists.
R01UH0136EJ0210 Rev.2.10
Jul 31, 2012
= − 20 ° C to 85 ° C/ − 40 ° C to 85 ° C, f
= 0 V at T
SS
opr
Measuring Condition
High-speed mode f
= 25 MHz
(BCLK)
XIN = 4.2 MHz (square wave),
PLL multiplied by 6
125 kHz on-chip oscillator stopped
f
= 25 MHz, A/D conversion
(BCLK)
XIN = 4.2 MHz (square wave),
PLL multiplied by 6
125 kHz on-chip oscillator stopped
f
= 20 MHz
(BCLK)
XIN = 20 MHz (square wave)
125 kHz on-chip oscillator stopped
125 kHz on-chip
Main clock stopped
oscillator mode
125 kHz on-chip oscillator on, no division
FMR22 = 1 (slow read mode)
Low-power mode
f
= 32 MHz
(BCLK)
In low-power mode, FMR 22 = FMR23 = 1
on flash memory
f
= 32 MHz
(BCLK)
In low-power mode,
(1)
on RAM
Wait mode
Main clock stopped
125 kHz on-chip oscillator on
Peripheral clock operating
= 25 ° C
T
opr
f
= 32 MHz (oscillation capacity High)
(BCLK)
125 kHz on-chip oscillator stopped
Peripheral clock operating
= 25 ° C
T
opr
f
= 32 kHz (oscillation capacity Low)
(BCLK)
125 kHz on-chip oscillator stopped
Peripheral clock operating
= 25 ° C
T
opr
Stop mode
Main clock stopped
125 kHz on-chip oscillator stopped
Peripheral clock stopped
= 25 ° C
T
opr
During flash
f
= 10 MHz, PM17 = 1 (one wait)
(BCLK)
memory program
V
= 3.0 V
CC1
During flash
f
= 10 MHz, PM17 = 1 (one wait)
(BCLK)
memory erase
V
= 3.0 V
CC1
= 25 MHz unless otherwise specified.
(BCLK)
(1)
31. Electrical Characteristics
V
= V
= 3 V
CC1
CC2
Standard
Unit
Min.
Typ.
Max.
22.0
mA
22.7
mA
17.0
mA
μ A
500.0
μ A
170.0
μ A
40.0
μ A
20.0
μ A
8.0
μ A
4.0
μ A
1.6
20.0
mA
30.0
mA
Page 732 of 800
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