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M16C/64A Group
Table 31.39
Electrical Characteristics (2)
R5F364A6NFA, R5F364A6NFB, R5F364A6DFA, R5F364A6DFB,
R5F364AENFA, R5F364AENFB, R5F364AEDFA, R5F364AEDFB
V
= V
= 2.7 to 3.3 V, V
CC1
CC2
Symbol
Parameter
I
Power supply current
CC
In single-chip, mode,
the output pin are
open and other pins
are V
SS
Note:
1.
This indicates the memory in which the program to be executed exists.
R01UH0136EJ0210 Rev.2.10
Jul 31, 2012
= −20°C to 85°C/−40°C to 85°C, f
= 0 V at T
SS
opr
Measuring Condition
High-speed mode
f
= 25 MHz
(BCLK)
XIN = 4.2 MHz (square wave), PLL multiplied by 6
125 kHz on-chip oscillator stopped
f
= 25 MHz, A/D conversion
(BCLK)
XIN = 4.2 MHz (square wave), PLL multiplied by 6
125 kHz on-chip oscillator stopped
f
= 20 MHz
(BCLK)
XIN = 20 MHz (square wave)
125 kHz on-chip oscillator stopped
125 kHz on-chip
Main clock stopped
oscillator mode
125 kHz on-chip oscillator on, no division
FMR22 = 1 (slow read mode)
Low-power mode
f
= 32 MHz
(BCLK)
In low-power mode
FMR 22 = FMR23 = 1
On flash memory
f
= 32 MHz
(BCLK)
In low-power mode
On RAM
Wait mode
Main clock stopped
125 kHz on-chip oscillator on
Peripheral clock operating
= 25 ° C
T
opr
f
= 32 MHz (oscillation capacity High)
(BCLK)
125 kHz on-chip oscillator stopped
Peripheral clock operating
= 25 ° C
T
opr
f
= 32 kHz (oscillation capacity Low)
(BCLK)
125 kHz on-chip oscillator stopped
Peripheral clock operating
= 25 ° C
T
opr
Stop mode
Main clock stopped
125 kHz on-chip oscillator stopped
Peripheral clock stopped
= 25 ° C
T
opr
During flash
f
= 10 MHz, PM17 = 1 (one wait)
(BCLK)
memory program
V
= 3.0 V
CC1
During flash
f
= 10 MHz, PM17 = 1 (one wait)
(BCLK)
memory erase
V
= 3.0 V
CC1
(BCLK)
(1)
(1)
31. Electrical Characteristics
V
= V
CC1
CC2
= 25 MHz unless otherwise specified.
Standard
Min.
Typ.
20.0
20.7
16.0
450.0
160.0
40.0
20.0
8.0
4.0
1.6
20.0
30.0
Page 731 of 800
= 3 V
Unit
Max.
mA
mA
mA
μ A
μ A
μ A
μ A
μ A
μ A
μ A
mA
mA
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