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ELECTRICAL DATA
(VDDINT= 1.0V± 0.05V, TA = -40 to 85°C, VDDM0 = 2.85V ± 0.15V, 2.5V ± 0.25V, 1.8V ± 0.15V)
Parameter
ROM/SRAM Address Delay
ROM/SRAM Chip Select 0 Delay
ROM/SRAM Chip Select 1 Delay
ROM/SRAM Chip Select 2 Delay
ROM/SRAM nOE(Output Enable) Delay
ROM/SRAM nWE(Write Enable) Delay
ROM/SRAM Byte Enable Delay
ROM/SRAM Write Byte Enable Delay
ROM/SRAM Output Data Delay
ROM/SRAM Read Data Setup Time
ROM/SRAM Write Data Hold Time
ROM/SRAM nWAIT Setup Time
ROM/SRAM nWAIT Hold Time
Preliminary product information describe products that are in development,
for which full characterization data and associated errata are not yet available.
41-14
Specifications and information herein are subject to change without notice.
Table 41-8. ROM/SRAM Bus Timing Constants
S3C6400X
Symbol
Min
t
RAD
t
RCD
t
RCD
t
RCD
t
ROD
t
RWD
t
RBED
t
RWBED
t
RDD
t
2.00
RDS
t
1.00
RDH
t
3.50
WS
t
1.00
WH
RISC MICROPROCESSOR
Max
Unit
8.50
ns
8.08
ns
7.78
ns
7.76
ns
8.60
ns
8.21
ns
8.46
ns
8.46
ns
8.89
ns
ns
ns
ns
ns
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