Samsung S3C6400X User Manual page 1170

ELECTRICAL DATA
Xm#SCLK
Xm#CKE
tSAD
ADDR
Xm#ADDR
tSAD
Xm0AP/
Xm1ADDR[10]
tSCSD
Xm#CSnx
tSRD
Xm#RASn
Xm#CASn
tSWD
Xm0WEndmc/
Xm1WEn
Xm#DQS[n]
Xm#DATA
tSWD
Xm0WEndmc/
Xm1WEn
Xm#DQS[n]
Xm#DATA
Xm#DQM[n]
Figure 41-11. DDR SDRAM READ / WRITE Timing (Trp = 2, Trcd = 2, Tcl = 2, DW = 16-bit)
Preliminary product information describe products that are in development,
for which full characterization data and associated errata are not yet available.
41-22
Specifications and information herein are subject to change without notice.
ADDR ADDR
tSCD
Read Timing
tWPREH
tWPRES
Write Timing
S3C6400X
tSAC
tRPRE
tDDS
tDQSS
tDQSD
tDQSH tDQSL
tDDD
tWR
RISC MICROPROCESSOR
tRPST
tWPST