Samsung S3C6400X User Manual page 1153

S3C6400X RISC MICROPROCESSOR
D.C. ELECTRICAL CHARACTERISTICS
All The DC characteristics for each pin include input sense levels, output drive levels, and currents.
These parameters can be used to determine maximum DC loading and to determine maximum
transition times for a given load. Table 41-3 shows the DC operating conditions for the high- and
low-strength input, output, and I/O pins.
.
VDD=1.65v~3.60v, TА=-40 to 85°C
Symbol Parameter
High Level Input Voltage
V
IH
LVCMOS Interface
Low Level Input Voltage
V
IH
LVCMOS Interface
ΔV Hysteresis Voltage
High Level Input Current
I
IH
Input Buffer
Low Level Input Current
I
IH
Input Buffer
Type A,B
V
OH
Type A,B
V
OL
Table 41-3. Normal I/O PAD DC Electrical Characteristics
Condition
Vin=VDD
Vin=VSS
Ioh=-100uA
Iol=100uA
Preliminary product information describe products that are in development,
for which full characterization data and associated errata are not yet available.
Specifications and information herein are subject to change without notice.
Min Typ
0.7*VDD
-0.3
0.15*VDD
-10
-10
VDD-0.2
ELECTRICAL DATA
Max Unit
VDD+0.3 V
0.3*VDD V
V
10 uA
10 uA
V
0.2 V
41-5