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ELECTRICAL DATA
Tri-State Output
I
OZ
Leakage Current
Quiescent supply
I
DD
current
Temp.
CIN
Input capacitance
Output
COUT
capacitance
Table 41-4. Special Memory DDR I/O PAD DC Electrical Characteristics
Symbol
VDDM0
VDDM1
VDDINT
Temp
V
IH
V
IL
I
IH
I
IL
High Level Input Current (with Pull
I
IH
Low Level Input Current (with Pull Up)
I
IL
V
Output High Voltage(@Ioh=-100uA)
OH
V
Output Low Voltage(@Iol=100uA)
OL
Symbol
Preliminary product information describe products that are in development,
for which full characterization data and associated errata are not yet available.
41-6
Specifications and information herein are subject to change without notice.
Vout=VSS or VDD
Ambient Temperature
Any Input and Bidirectional
buffers
Any Output buffer
Parameter
Output supply voltage
Internal Voltage
Ambient Temperature
dc Input Logic High
dc Input Logic Low
High Level Input Current
Low Level Input Current
Down)
Table 41-5. USB DC Electrical Characteristics
Parameter
S3C6400X
-10
-40
Min
1.65
0.9
-40
0.8*VDDM
0/1
-
-10
-10
20
-60
VDDM0/1-
0.2
-
Condition
Min
RISC MICROPROCESSOR
10
100
25
85
4
4
Typ
Max
1.8
3.0
2.5
2.75
1.0
1.1
25
85
-
-
0.2*VDDM
-
0/1
-
10
-
10
-
60
-
-20
-
-
-
0.2
Max
uA
uA
°C
pF
pF
Unit
V
V
°C
V
V
uA
uA
uA
uA
V
V
Unit
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