Summary Of Analysis Equations - Keithley 4200A-SCS Reference Manual

Model 4200A-SCS Parameter Analyzer Reference Manual
Symbol
N
EFF
N(90% W
N
M
Q
EFF
Q / t
R
SERIES
t
OX
V
GS
V
FB
V
H
V
TH
w
ψ
S
ψ
0
φ
B
l

Summary of analysis equations

The analysis equations used by the Model 82 software are summarized in the following.
Band bending
Depletion depth
Doping concentration
Effective oxide charge
4200A-901-01 Rev. C / February 2017
Description
Effective oxide charge concentration.
Doping corresponding to 90% maximum w profile (approximates doping in the
)
MAX
bulk).
Mobile ion concentration in the oxide.
Effective oxide charge.
Current measured by the Model 595 at the end of each capacitance
measurement with the unit in the capacitance function.
Series resistance.
Oxide thickness.
Gate voltage. More specifically, the voltage at the gate with respect to the
substrate.
Flatband voltage, or the value of V
Voltage reading sent by Model 590 with matching C
The point where the surface potential, ψS, is equal to twice the bulk potential,
φB.
Depletion depth or thickness. Silicon under the gate is depleted of minority
carriers in inversion and depletion.
Silicon surface potential as a function of V
represents band bending and is related to surface potential via the bulk
potential.
Offset in ψS due to calculation method and V
Silicon bulk potential.
Extrinsic Debye length.
Appendix D: Using a Model 82 C-V System
that results in C .
GS FB
and G.
H
. More precisely, this value
GS
.
0
Units
2
1 / cm
3
1 / cm
3
1 / cm
2
coul / cm
A
Ω
nm
V
V
V
V
µm
V
V
V
m
D-63