Keithley 4200A-SCS Reference Manual page 1361

Appendix L: Wafer-level reliability testing
I_crit
I_box
I_max
exit_curr_mult
exit_slope_mult
q_max
t_max
v_max
area
exit_mode
V_size
I_size
T_size
q_size
L-12
At least 10 times the test system current measurement noise floor; this oxide
current (A) is the minimum value used in determining the change of slope
breakdown criteria (Ref. JESD35-A)
An optional measured current level for which a stress voltage is recorded; this value
provides an additional point on the current-voltage curve; a typical value is 1 µA
(Ref. JESD35-A)
Oxide breakdown criteria; I_bd is obtained from I-V curves and is the oxide current
at the step just prior to breakdown (Ref. JESD35-A)
Change of current failure criteria; this is the ratio of measured
current over previous current level, which, if exceeded, will result in failure (2.5 to 5,
recommended value: 10 to 100)
Change of slope failure criteria; this is the factor of change in FN slope, which, if
exceeded, will result in failure (2.5 to 5, recommended value: 3)
Maximum accumulated oxide charge per oxide area; used to terminate a test where
breakdown occurs but was not detected during the test (C/cm
Maximum stress time allowed in seconds; reaching this limit will result in test to
finish (s)
The maximum voltage limit for the voltage ramp; this limit is specified at 30 MV/cm
for oxides less than 20 nm thick and 15 MV/cm for thicker oxides; refer to Details
2
Area of oxide structure (cm
Failure criteria mode; refer to Details
Size of data array; maximum 65535
Size of data array; maximum 65535
Size of data array; maximum 65535
Size of data array; maximum 65535
Model 4200A-SCS Parameter Analyzer Reference Manual
)
4200A-901-01 Rev. C / February 2017
2
) (Ref. JESD35-A)