V-Ramp And J-Ramp Tests - Keithley 4200A-SCS Reference Manual

Appendix L: Wafer-level reliability testing

V-ramp and J-ramp tests

Charge-to-breakdown measurement (Q
breakdown. They are a standard method used to determine quality of gate oxides in MOS devices.
The V-ramp test starts at the use-condition voltage (or lower) and ramps linearly from this value until
oxide breakdown. The J-ramp starts at a low current and ramps exponentially until oxide breakdown.
User modules for these tests are provided in the wlrlib user library. The user modules in the
wlrlib user library run linear regression and charge-to-breakdown (Q
reliability (WLR) testing. These user modules are summarized in the table below.
wlrlib user modules
User module
llsq1
qbd_rmpv
qbd_rmpj
L-10
Figure 838: Process flow HCI/NBTI/constant current EM
) tests are a measure of time-dependent gate oxide
BD
Description
Performs simple linear regression.
Performs a charge-to-breakdown test using the
QBD V-ramp test.
Performs a charge-to-breakdown test using the
QBD J-ramp test.
Model 4200A-SCS Parameter Analyzer Reference Manual
) ramp tests for wafer-level
BD
4200A-901-01 Rev. C / February 2017