Keithley 4200A-SCS Reference Manual page 1202

Model 4200A-SCS Parameter Analyzer Reference Manual
G/nI computation
Where:
•
G = generation rate (s
•
ε
= permittivity of semiconductor (F/cm)
S
•
A = gate area (cm
•
N
AVG
•
C
OX
•
C
t(i+1)
•
C
t(i-1)
•
n = intrinsic carrier concentration (cm
I
•
t = time interval between C-t measurements (s)
int
•
i = [2, #Rdgs-1]
w - wF computation
Where:
•
w = depletion depth (cm)
•
w = equilibrium inversion depth (cm)
F
•
ε
= permittivity of semiconductor (F/cm)
S
•
A = gate area (cm
•
C = i(th) value of measured C-t capacitance (pF)
ti
•
C
MIN
Determining generation velocity and generation lifetime
The generation lifetime, τ
plot, while the generation velocity, s, is the y-axis (G/n
Zerbst plot.
4200A-901-01 Rev. C / February 2017
-1
)
2
)
= average doping concentration (cm
= oxide (maximum) capacitance (pF)
= (i+1) value of measured C-t capacitance (pF)
= (i-1) value of measured C-t capacitance (pF)
2
)
= equilibrium minimum capacitance (pF)
is equal to the reciprocal of the slope of the linear portion of the Zerbst
G
Appendix D: Using a Model 82 C-V System
-3
)
-3
)
) intercept of the same linear section of the
I
D-61