Doping Profile - Keithley 4200A-SCS Reference Manual

Model 4200A-SCS Parameter Analyzer Reference Manual
Note that C
However, since C
Where:
•
Q
EFF
•
C
OX
•
W
MS
•
A = gate area (cm
For example, assume a 0.01cm
N = 10
BULK
The effective oxide charge concentration, N
charge as follows:
Where:
•
N
EFF
•
Q
EFF
•
q = electron charge (1.60219 × 10
For example, with an effective oxide charge of 2.5 x 10
concentration is:

Doping profile

The doping profile of the device is derived from the C-V curve based on the definition of the
differential capacitance (measured by the 590 and 595) as the differential change in depletion region
charge produced by a differential change in gate voltage (Nicollian and Brews 380-389).
4200A-901-01 Rev. C / February 2017
here is per unit of area. So that,
OX
is in F, we must convert to pF by multiplying by 10
OX
= effective charge (coul/cm
= oxide capacitance (pF)
= metal semiconductor work function (V)
2
)
2
16 -3
cm (resulting in W
MS
= effective concentration of oxide charge (Units of charge/cm
= effective oxide charge (coulombs/cm
2
)
50 pF capacitor with a flatband voltage of -5.95 V, and a p-type
= -0.95 V). In this case, Q
, is computed from effective oxide charge and electron
EFF
2
)
-19
coulombs)
-8
coul/cm
Appendix D: Using a Model 82 C-V System
-12
as follows:
-4 2
= 2.5 x 10 coul/cm .
EFF
2
)
2
, the effective oxide charge
D-53