Model 4200A-SCS Parameter Analyzer Reference Manual
Series resistance compensation
a = G
- (G
M
Threshold voltage
Work function
Zerbst plot (generation lifetime and velocity)
References
The references below are cited in this chapter:
Nicollian, E.H. and Brews, J.R., MOS Physics and Technology. Wiley, New York (1982).
Sze, S.M., Physics of Semiconductor Devices 2nd edition. Wiley, New York (1985).
Snow, E.H. Grove, A.S., Deal, B.E., and Sah, C.T.J., Ionic Transport Phenomena in Insulating Films,
Appl. Phys., 36, 1664 (1965).
Bibliography of C-V Measurements
Texts
Grove, A.S., Physics and Technology of Semiconductor Devices, Wiley, New York (1967).
Sze, S.M., Semiconductor Devices, Physics and Technology, Wiley, New York (1985).
4200A-901-01 Rev. C / February 2017
+ ω
2
2
2
C
) R
M
M
SERIES
Appendix D: Using a Model 82 C-V System
D-65