Basic Timing: The basic timing for DRAM access is 4 cycles. This basic timing is shown in
figure 13.17. Tpc is the precharge cycle, Tr the RAS assert cycle, Tc1 the CAS assert cycle, and
Tc2 the read data latch cycle.
CKIO
A25–A0
RD/
D63–D0
(read)
D63–D0
(write)
DACKn
(SA: IO ← memory)
DACKn
(SA: IO → memory)
Note: For DACKn, an example is shown where CHCRn.AL (access level) = 0 for the DMAC.
Rev. 6.0, 07/02, page 400 of 986
Tr1
Tr2
Row
Figure 13.17 Basic DRAM Access Timing
Tc1
Tc2
Column
Tpc