Samsung S3C2500B User Manual page 621

ELECTRICAL DATA
Signal Name
tnRCSd ROM/SRAM chip select delay time
tnRCSh ROM/SRAM chip select hold time
tnOEd ROM/SRAM output enable delay time
tnOEh ROM/SRAM output enable hold time
tnSDWEd ROM/SRAM write byte enable delay time
tnSDWEh ROM/SRAM write byte enable hold time
tADDRd ROM/SRAM address delay time
tADDRh ROM/SRAM address hold time
tDATAd ROM/SRAM data delay time
tDATAh ROM/SRAM data hold time
tALEd ROM/SRAM address latch enable delay time
tALEh ROM/SRAM address latch enable hold time
tMADDRd ROM/SRAM muxed bus address delay time
tMADDRh ROM/SRAM muxed bus address hold time
tnWAITd ROM/SRAM WAIT signal delay time
tnWAITh ROM/SRAM WAIT signalhold time
tCC SDRAM Clock Cycle Time
tCH SDRAM Clock High Pulse Width
tCL SDRAM Clock Low Pulse Width
tCASd SDRAM Column Address Strobe Delay Time
tCASh SDRAM Column Address Strobe Hold Time
tRASd SDRAM Row Address Strobe Delay Time
tRASh SDRAM Row Address Strobe Hold Time
tCSd SDRAM Chip Select Delay Time
tCSd SDRAM Chip Select Hold Time
tWEd SDRAM Write Enable Delay Time
tWEh SDRAM Write Enable Hold Time
tWDd SDRAM Write Data Delay Time
tWDh SDRAM Write Data Hold Time
tRDd SDRAM Read Data Delay Time
tRDh SDRAM Read Data Hold Time
tADDRd SDRAM Address Delay Time
tADDRh SDRAM Address Hold Time
tDQMd SDRAM Data Input/Output Mask Delay Time
tDQMh SDRAM Data Input/Output Mask Hold Time
18-6
Table 18-6. AC Electrical Characteristics for S3C2500B
Description
S3C2500B
Min Max Unit
1.32 3.43 ns
1.17 3.02 ns
0.79 1.93 ns
0.69 1.7 ns
1.23 2.82 ns
1.42 3.28 ns
1.02 2.39 ns
0.94 2.24 ns
1.55 3.79 ns
1.37 3.18 ns
1.43 3.01 ns
1.26 3.09 ns
1.86 4.42 ns
1.09 2.72 ns
1 5.11 ns
1 5.11 ns
7.5 7.5 ps
4.1 4.5 ps
3.4 3.5 ps
2.0 4.7 ps
2.0 4.6 ps
2.0 4.8 ps
2.0 4.7 ps
2.0 4.8 ps
2.0 4.7 ps
1.7 4.0 ps
1.7 3.9 ps
2.3 5.3 ps
1.6 3.5 ps
6.0 7.0 ps
6.0 7.0 ps
2.2 5.0 ps
2.2 4.9 ps
2.0 4.9 ps
1.8 4.2 ps