Flash Memory Characteristics; Table 22.12 Flash Memory Characteristics - Renesas H8S/2111B Hardware Manual

22.5

Flash Memory Characteristics

Table 22.12 shows the flash memory characteristics.

Table 22.12 Flash Memory Characteristics

Conditions: V
CC
Item
1
Programming time* , *
1 3 6
Erase time* , * ,*
Reprogramming count
Programming Wait time after
SWE-bit setting*
Wait time after
PSU-bit setting*
Wait time after
P-bit setting*
Wait time after
P-bit clear*
Wait time after
PSU-bit clear*
Wait time after
PV-bit setting*
Wait time after
dummy write*
Wait time after
PV-bit clear*
Wait time after
SWE-bit clear*
Maximum
programming
count*
= 3.0 V to 3.6 V, V
SS
Symbol
2 4
,* t
P
t
E
N
WEC
x
1
y
1
z1
1 4
, *
z2
z3
α
1
β
1
γ
1
ε
1
η
1
θ
1
N
1 4 5
, * ,*
= 0 V, T = –20 to +75°C
a
Min. Typ.
— 10
— 100
— —
1 —
50 —
28 30
198 200
8 10
5 —
5 —
4 —
2 —
2 —
100 —
— —
Test
Max. Unit Condition
200 ms/
128
bytes
1200 ms/
block
100 times
— µs
— µs
1 ≤ n ≤ 6
32 µs
7 ≤ n ≤ 1000
202 µs
12 µs Additional
write
— µs
— µs
— µs
— µs
— µs
— µs
1000 times
Rev. 1.00, 05/04, page 527 of 544