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18.1
Features
The H8/3052BF has 512 kbytes of on-chip flash memory. The features of the flash memory are
summarized below.
• Four flash memory operating modes
Program mode
Erase mode
Program-verify mode
Erase-verify mode
• Programming/erase methods
The flash memory is programmed 128 bytes at a time. Block erase (in single-block units) can
be performed. To erase the entire flash memory, each block must be erased in turn. Block
erasing can be performed as required on 4 kbytes, 32 kbytes, and 64 kbytes blocks.
• Programming/erase times
The flash memory programming time is 10 ms (typ.) for simultaneous 128-byte programming,
equivalent approximately to 80 µs (typ.) per byte, and the erase time is 100 ms (typ.).
• Reprogramming capability
The flash memory can be reprogrammed up to 100 times.
• On-board programming modes
There are two modes in which flash memory can be programmed/erased/verified on-board:
Boot mode
User program mode
• Automatic bit rate adjustment
With data transfer in boot mode, the LSI's bit rate can be automatically adjusted to match the
transfer bit rate of the host.
• Flash memory emulation in RAM
Flash memory programming can be emulated in real time by overlapping a part of RAM onto
flash memory.
• Protect modes
There are two protect modes, hardware and software, which allow protected status to be
designated for flash memory program/erase/verify operations.
Section 18 ROM
Rev. 3.00 Mar 21, 2006 page 555 of 814
Section 18 ROM
REJ09B0302-0300
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