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FLASH MEMORY VERSION
19.1 Parallel input/output mode
19.1.6 Program/erase algorithm flow chart
Program
ADDR = FIRST LOCATION
DURATION = 10 µs
WRITE PROGRAM-VERIFY
FAIL
NO
INCREMENT
ADDR
19–20
START
V
= 5V
CC
V
= V
H
PP
PP
X = 0
WRITE PROGRAM
40
16
COMMAND
WRITE PROGRAM
D
IN
DATA
X = X + 1
C0
16
COMMAND
DURATION = 6 µs
YES
X = 25 ?
NO
PASS
VERIFY
BYTE ?
PASS
LAST
ADDR ?
YES
WRITE READ
00
16
COMMAND
V
= V
L
PP
PP
DEVICE
PASSED
7751 Group User's Manual
Erase
YES
VERIFY
BYTE ?
FAIL
FAIL
INCREMENT
ADDR
DEVICE
FAILED
START
V
= 5V
CC
V
= V
H
PP
PP
ALL
BYTES = 00
?
16
NO
PROGRAM
ALL BYTES = 00
16
ADDR = FIRST LOCATION
X = 0
WRITE ERASE
20
16
COMMAND
WRITE ERASE
20
16
COMMAND
DURATION = 9.5 ms
X = X + 1
WRITE ERASE-VERIFY
A0
16
COMMAND
DURATION = 6
µs
YES
X = 1000 ?
NO
PASS
VERIFY
BYTE ?
PASS
NO
LAST
ADDR ?
YES
WRITE READ
00
16
COMMAND
V
= V
L
PP
PP
DEVICE
PASSED
VERIFY
BYTE ?
FAIL
DEVICE
FAILED
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