Fpm Or Edo Timing Parameters - Motorola MPC8240 User Manual

Symbol
AA
ASC
ASR
CAC
CAH
CAS
3
CAS
5
CHR
CP
CP
4
CRP
CSH
CSP
DH
DS
PC
RAC
RAD
RAH
RAL
RAS
6P
RASP
RASS
RC
RCD
2
RHCP
RP
1
RPC
RSH
WCH
WCS
WP
WRH
WRP
Note that all signal transitions occur on the rising edge of the memory bus clock.
Table 6-22. FPM or EDO Timing Parameters
Access time from column address
Column address setup time
Row address setup time
Access time from CAS
Column address hold time
CAS assertion interval for a single beat, or for the first access in a burst
CAS assertion interval for page mode access
CAS hold time for CBR refresh
CAS precharge time
CAS precharge interval during page-mode access
CAS to RAS precharge time
CAS hold time
CAS setup time for CBR refresh
Data in hold time
Data in setup time
Fast page mode cycle time
Access time from RAS
RAS to column address delay time
Row address hold time
Column address to RAS lead time
RAS assertion interval for CBR refresh
RAS pulse width (page mode)
Self-refresh interval (power saving modes only)
Random access (read, write, or refresh) cycle time
RAS to CAS delay interval
RAS hold time from CAS precharge (page mode only)
RAS precharge interval
RAS precharge to CAS active time
RAS hold time
Write command hold time (referenced to CAS)
Write command setup time
Write command pulse width
Write to RAS hold time (CBR refresh)
Write to RAS precharge time (CBR refresh)
Chapter 6. MPC8240 Memory Interface
FPM or EDO DRAM Interface Operation
Timing Parameter
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