Programming - ST STM32F423 Reference Manual

RM0430
Mass Erase
To perform Mass Erase, the following sequence is recommended:
1. Check that no Flash memory operation is ongoing by checking the BSY bit in the
FLASH_SR register
2. Set the MER bit in the FLASH_CR register
3. Set the STRT bit in the FLASH_CR register
4. Wait for the BSY bit to be cleared
Note: If MERx and SER bits are both set in the FLASH_CR register, mass erase is performed.
If both MERx and SER bits are reset and the STRT bit is set, an unpredictable behavior may
occur without generating any error flag. This condition should be forbidden.
3.5.4

Programming

Standard programming
The Flash memory programming sequence is as follows:
1. Check that no main Flash memory operation is ongoing by checking the BSY bit in the
FLASH_SR register.
2. Set the PG bit in the FLASH_CR register
3. Perform the data write operation(s) to the desired memory address (inside main
memory block or OTP area):
–
–
–
–
4. Wait for the BSY bit to be cleared.
Note: Successive write operations are possible without the need of an erase operation when
changing bits from '1' to '0'. Writing '1' requires a Flash memory erase operation.
If an erase and a program operation are requested simultaneously, the erase operation is
performed first.
Programming errors
It is not allowed to program data to the Flash memory that would cross the 128-bit row
boundary. In such a case, the write operation is not performed and a program alignment
error flag (PGAERR) is set in the FLASH_SR register.
The write access type (byte, half-word, word or double word) must correspond to the type of
parallelism chosen (x8, x16, x32 or x64). If not, the write operation is not performed and a
program parallelism error flag (PGPERR) is set in the FLASH_SR register.
If the standard programming sequence is not respected (for example, if there is an attempt
to write to a Flash memory address when the PG bit is not set), the operation is aborted and
a program sequence error flag (PGSERR) is set in the FLASH_SR register.
Byte access in case of x8 parallelism
Half-word access in case of x16 parallelism
Word access in case of x32 parallelism
Double word access in case of x64 parallelism
Embedded Flash memory interface
RM0430 Rev 8 73/1324
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