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Table 6.12 AC Characteristics in Memory Read Mode (1)
= 5.0 V ±10%, V
(Conditions: V
CC
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
ADDRESS
CE
OE
WE
DATA
Note: Data is latched on the rising edge of WE.
Figure 6.17 Timing Waveforms for Memory Read after Command Write
= 25°C ±5°C)
= 0 V, T
SS
a
Symbol
Min
t
20
nxtc
t
0
ceh
t
0
ces
t
50
dh
t
50
ds
t
70
wep
⎯
t
r
⎯
t
f
Command write
t
t
wep
ceh
t
ces
t
t
f
r
H'00
t
dh
t
ds
Max
Unit
⎯
μs
⎯
ns
⎯
ns
⎯
ns
⎯
ns
⎯
ns
30
ns
30
ns
Memory read mode
ADDRESS STABLE
t
nxtc
Rev.3.00 Jul. 19, 2007 page 155 of 532
6. ROM
Notes
DATA
REJ09B0397-0300
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